Diane Bonkoungou received the Engineering degree in Applied Physics from the Institut National des Sciences Appliquées de Toulouse, France, in 2023. She is currently pursuing the Ph.D. degree in the modeling of drift parameters of SiC MOSFETs for the predictive maintenance of power converters with the CEA-LETI System Department in Grenoble, France, in collaboration with the SATIE Laboratory at Gustave Eiffel University, Versailles, France. From January to July 2026 (ongoing), she is a visiting Ph.D. researcher at Aalborg University, Denmark. Her experience includes wide-bandgap semiconductor device characterization and modeling. Her current research interests include ageing modeling and reliability evaluation of power semiconductor devices.