The objective is to develop models for the degradation parameters (Threshold voltage, ON-resistance) of SiC MOSFETs that can be used for predictive maintenance.

The research focuses on the analysis and modeling of degradation mechanisms in SiC MOSFETs through two distinct experimental approaches:

• DC Power Cycling Tests (DC-PCT): To evaluate thermomechanical fatigue and package degradation.
• Combined DC-PCT and Gate Switching Stress (GSS): To investigate the synergistic effects of gate switching and thermal cycling on gate oxide integrity, and ultimately their impact on the device threshold voltage that is an aging precursor of the device.

Bénéwende Diane Raïnatou BONKOUNGOU

Aalborg University